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NTE3102 Photon Coupled Interrupter Module NPN Transistor
Description: The NTE3102 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an "ON" into an "OFF" state. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Total Device Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +100C Lead Temperature (During Soldering, 5sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C Infrared Emitting Diode Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width 1s, PRR 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Power Dissipation, PE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33mW/C Phototransistor Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/C Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Emitter-Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Electrical Characteristics: (TA = +25C, Note 1 unless otherwise specified)
Parameter Emitter Reverse Breakdown Voltage Forward Voltage Reverse Current Capacitance V(BR)R VF IR Ci IR = 10A IF = 60mA VR = 5V V = 0, f = 1MHz 6 - - - - - - 30 - 1.7 100 - V V nA pF Symbol Test Conditions Min Typ Max Unit
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
Electrical Characteristics (Cont'd): (TA = +25C, Note 1 unless otherwise specified)
Parameter Detector Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Dark Current Capacitance Coupled Photodiode Current ICE(on) VCE = 5V, IF = 5mA VCE = 5V, IF = 20mA VCE = 5V, IF = 30mA Collector-Emitter Saturation Voltage Turn-On Time Turn-Off Time VCE(sat) ton toff IC = 1.8mA, IF = 30mA VCC = 5V, IF = 30mA, RL = 2.5k 0.15 1.0 1.9 - - - - - - - 8 50 - - - 0.4 - - mA mA mA V s s V(BR)CEO IC = 1mA V(BR)ECO IE = 100A ICEO Cce VCE = 45V VCE = 5V, f = 1MHz 55 6 - - - - - 3.3 - - 100 5.0 V V nA pF Symbol Test Conditions Min Typ Max Unit
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
.124 (3.15
+
E
D
+
D - Detector E - Emitter .246 (6.25)
.136 (3.54) Min Sensing Area .303 (7.69) Min
.433 (11.0) Max
.315 (8.0) Min
Seating Plane
.295 (7.49) Max
.110 (2.79) Max

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